DocumentCode :
2247547
Title :
A new PSM system: SCAAM with Phase Phirst!
Author :
Levenson, M.D. ; Ebihara, T. ; Desai, S. ; White, S.
Author_Institution :
MD Levenson Consulting, Saratoga, CA, USA
fYear :
2001
fDate :
Oct. 31 2001-Nov. 2 2001
Firstpage :
8
Lastpage :
9
Abstract :
The Sidewall Chrome Alternating Aperture Mask (SCAAM), a next generation alternating Phase Shift Mask (alt-PSM) structure, has printed 70 nm semi-dense lines and offers the potential for low cost 100 nm imaging with 248 nm light. The SCAAM reticle production process etches the phase topography first and then forms transparent openings to define the image in a conformal chrome layer deposited afterwards. The Phase Phirst! system employs ready-to-write SCAAM blanks with regular pre-patterned surface topography, chrome and resist, eliminating the cost of writing a custom phase pattern on every plate. To use this type of mask, circuit designers would have to place every near-minimum-sized circuit feature (e.g.. gate) at a predefined phase-step location. Interconnections and larger features would be defined using the trim mask.
Keywords :
integrated circuit technology; nanotechnology; phase shifting masks; ultraviolet lithography; 248 nm; 70 to 100 nm; DUV lithography; SCAAM reticle production process; alternating PSM structure; alternating phase shift mask; conformal chrome layer; deep UV lithography; high-speed ASIC designs; low cost 100 nanometre imaging; phase topography; ready-to-write SCAAM blanks; regular pre-patterned surface topography; sidewall chrome alternating aperture mask; transparent openings; Apertures; Application specific integrated circuits; Costs; Economics; Etching; Integrated circuit interconnections; Production; Resists; Surface topography; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
Type :
conf
DOI :
10.1109/IMNC.2001.984032
Filename :
984032
Link To Document :
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