• DocumentCode
    2247565
  • Title

    Free-carrier absorption in Si nanocrystals probed by microcavity photoluminescence

  • Author

    Kekatpure, Rohan D. ; Guichard, Alex R. ; Brongersma, Mark L.

  • Author_Institution
    Geballe Lab. of Adv. Mater., Stanford Univ., Stanford, CA
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Resonant photoluminescence of Si-nanocrystals is used to determine their free-carrier absorption cross-section (sigmaFCA) at visible/near-infrared wavelengths. Rate-equation modeling, including ensemble effects, yields sigmaFCA = 7:8 times 10-18 cm2 at 895 nm. This has implications for Si-based laser design at various wavelengths.
  • Keywords
    nanostructured materials; photoluminescence; quantum dot lasers; silicon; Si; ensemble effect; free-carrier absorption; laser design; microcavity photoluminescence; near-infrared wavelength; rate-equation model; resonant photoluminescence; silicon nanocrystal; visible wavelength; Electromagnetic wave absorption; Laser modes; Microcavities; Nanocrystals; Optical design; Photoluminescence; Pump lasers; Resonance; Scanning electron microscopy; Wavelength measurement; 130.3120; 130.3130; 140.3945; 140.3948; 140.4780; 230.5590;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4571934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2247565