DocumentCode
2247625
Title
Room temperature polariton lasing and BEC in semiconductor microcavities
Author
Baumberg, J.J. ; Christopoulos, S. ; Von Hogersthal, G. Baldassarri Hoger ; Grundy, A. ; Lagoudakis, P.G. ; Kavokin, A. ; Christmann, G. ; Butte, R. ; Feltin, E. ; Carlin, J.-F. ; Grandjean, N. ; Solnyshkov, Dmitry ; Malpuech, G.
Author_Institution
Dept. of Phys., Univ. of Cambridge, Cambridge
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Strongly-coupled GaN semiconductor microcavities exhibit polariton effects at room temperature. We show sub-mW thresholds for coherent polariton lasing at 300 K, and discuss polarization evidence for the formation of Bose-Einstein polariton condensates.
Keywords
Bose-Einstein condensation; microcavities; polaritons; Bose-Einstein condensates; coherent polariton lasing; semiconductor microcavities; sub-mW thresholds; temperature 293 K to 298 K; temperature 300 K; Astronomy; Distributed Bragg reflectors; Gallium nitride; Microcavities; Photonics; Physics; Polarization; Robustness; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571938
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