Title :
Five-State Logic Using MOS-HBT-NDR Circuit by Standard SiGe BiCMOS Process
Author :
Gan, Kwang-Jow ; Liang, Dong-Shong ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang ; Wen, Chun-Ming
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan Hsien
Abstract :
The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The authors demonstrate a five-valued logic circuit using the two-peak MOS-HBT-NDR circuit as the driver and another two-peak MOS-HBT-NDR circuit as the load. The design and simulation is based on the technique of the standard 0.35mum SiGe process
Keywords :
BiCMOS logic circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; logic design; 0.35 micron; BiCMOS process; MOS-HBT-NDR circuit; SiGe; five-state logic circuit; heterojunction bipolar transistor devices; metal-oxide-semiconductor field-effect-transistor; negative-differential-resistance; BiCMOS integrated circuits; Circuit simulation; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Logic circuits; Logic devices; Semiconductor diodes; Silicon germanium; Voltage;
Conference_Titel :
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
1-4244-0387-1
DOI :
10.1109/APCCAS.2006.342501
