Five-State Logic Using MOS-HBT-NDR Circuit by Standard SiGe BiCMOS Process

Author

Gan, Kwang-Jow ; Liang, Dong-Shong ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang ; Wen, Chun-Ming

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan Hsien

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1476

Lastpage

1479

Abstract

The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The authors demonstrate a five-valued logic circuit using the two-peak MOS-HBT-NDR circuit as the driver and another two-peak MOS-HBT-NDR circuit as the load. The design and simulation is based on the technique of the standard 0.35mum SiGe process

Keywords

BiCMOS logic circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; logic design; 0.35 micron; BiCMOS process; MOS-HBT-NDR circuit; SiGe; five-state logic circuit; heterojunction bipolar transistor devices; metal-oxide-semiconductor field-effect-transistor; negative-differential-resistance; BiCMOS integrated circuits; Circuit simulation; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Logic circuits; Logic devices; Semiconductor diodes; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342501

Filename

4145682