TiN diffusion barriers for copper metalization

Summary form only given. The requirements of future integrated circuits will result in shrinking dimensions and consequently new materials like copper or low k materials. TiN films are an interesting candidate as diffusion barriers because of their well known compatibility to semiconductor technology. Moreover TiN films were already shown to be stable barriers against copper diffusion. Based on a series of tests including the stochiometry variation of films deposited by reactive magnetron sputtering on Si and SiO/sub 2/ and annealing in different atmospheres the interaction between film properties and barrier stability is studied. The applicability of optical, mechanical and analytical thickness measurement methods for thin TiN films is investigated. Advantages and drawbacks of the used measurement techniques given by method related boundary conditions are discussed.