Title :
Physics-based Modeling and Simulation of Dual Material Gate(DMG) LDMOS
Author :
Dai, Yuehua ; Hu, Yuan ; Liu, Qi ; Ke, Daoming ; Chen, Junning
Author_Institution :
Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
In this paper, an analytical modeling of a new structure called dual material gate (DMG) lateral double diffused metal oxide semiconductor (LDMOS) is presented, which combines the advantages of LDMOS and DMG MOSFET. The expressions for the surface potential and electric field under the two poly-silicon gates are derived. Then, a modeling strategy for channel current is presented for the DMG-LDMOS. Channel current model includes the velocity overshoot effect, and avoids calculating the nonlinear drift resistance which is prohibitively difficult to value for LDMOS. The model results are verified by comparing them to simulated results obtained from the device simulator MEDICI
Keywords :
MOSFET; semiconductor device models; channel current; dual material gate LDMOS; enhanced diffusion drift equation; field effect transistor; lateral double diffused metal oxide semiconductor; surface potential; velocity overshoot effect; Analytical models; Boundary conditions; Electric potential; FETs; Inorganic materials; MOSFET circuits; Medical simulation; Poisson equations; Semiconductor materials; Surface resistance; Dual Material Gate Field Effect Transistor (DMGFET); Enhanced Diffusion Drift Equation; Lateral Double Diffused Metal Oxide Semiconductor (LDMOS); Quasi-Saturation;
Conference_Titel :
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
1-4244-0387-1
DOI :
10.1109/APCCAS.2006.342507
