Title :
Anti-stokes photoluminescence in GaN due to three-photon absorption
Author :
Sun, Guan ; Ding, Yujie J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We have observed anti-Stokes photoluminescence from n-type free-standing GaN, pumped at the excitation photon energy of 1.586 eV, due to three-photon absorption.
Keywords :
III-V semiconductors; gallium compounds; multiphoton processes; photoluminescence; wide band gap semiconductors; GaN; anti-Stokes photoluminescence; electron volt energy 1.586 eV; excitation photon energy; three-photon absorption; Absorption; Excitons; Gallium nitride; Photoluminescence; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
