TIN/W double layers as a barrier system for use in Cu metalization

Copper is considered as a candidate to replace aluminum based interconnections in integrated circuits, because of its higher electromigration resistance and low electrical resistivity. To fulfill the overall requirements it will be necessary to develop an adequate interconnection system for this material. This includes reliable barriers, but also resulting properties of the whole metalization system like, for example, corrosion resistance, adhesion properties, behaviour during patterning or reliability. This paper discusses both the barrier properties of a TiN(N/Ti 1)/W system and its effect on resulting properties of the deposited Cu film. The copper films were deposited by PVD or CVD.