DocumentCode
2248001
Title
Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses
Author
Camp, Michael ; Garbe, Heyno ; Nitsch, Daniel
Author_Institution
Inst. of Electr. Eng. & Meas. Sci., Hannover Univ., Germany
Volume
1
fYear
2002
fDate
19-23 Aug. 2002
Firstpage
87
Abstract
In this paper the influence of TTL- and CMOS-technology on the destruction effects of semiconductors by impact of EMP and UWB pulses is determined. Different logic devices like NANDs and inverters were exposed to high amplitude transient pulses.
Keywords
CMOS integrated circuits; NAND circuits; electromagnetic compatibility; electromagnetic pulse; logic gates; transistor-transistor logic; CMOS-technology; EMC; EMP; NANDs; TTL-technology; UWB pulses; high amplitude transient pulses; inverters; logic devices; semiconductor device destruction; CMOS technology; EMP radiation effects; Electric breakdown; Electric variables measurement; Electromagnetic fields; Electromagnetic measurements; Electromagnetic transients; Electromagnetic waveguides; Modems; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2002. EMC 2002. IEEE International Symposium on
Conference_Location
Minneapolis, MN, USA
Print_ISBN
0-7803-7264-6
Type
conf
DOI
10.1109/ISEMC.2002.1032453
Filename
1032453
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