Ultra-smooth surface preparation with gas cluster ion beams

Author

Toyoda, N. ; Matsui, S. ; Yamada, I.

Author_Institution

Lab. of Adv. Sci. & Technol. for Ind., Himeji Inst. of Technol., Hyogo, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

32

Lastpage

33

Abstract

The gas cluster ion beam (GCIB) realizes an ultra low-energy ion beam (of the order of several eV) and exhibits strong surface smoothing effects at normal incidence. One of the most significant differences of the GCIB smoothing process from other mechanical polishing techniques is that it can smooth a non-planar surface or a local area of the surface by controlling the beam steering. In this work, we introduce a state-of-the-art smoothing technology with the GCIB process, and apply it to the smoothing of widegap semiconductors (6H-SiC and GaN) and metal (Cu) substrates.

Keywords

III-V semiconductors; atomic force microscopy; copper; gallium compounds; ion beam applications; ion-surface impact; polishing; silicon compounds; surface topography; wide band gap semiconductors; 7.5 to 10 eV; AFM image; Cu; GaN; SiC; beam steering; gas cluster ion beams; metal substrate; surface roughness; surface smoothing effects; ultra low-energy ion beam; ultra-smooth surface preparation; widegap semiconductor substrate; Acceleration; Argon; Atomic force microscopy; Ion beams; Rough surfaces; Smoothing methods; Substrates; Surface roughness; Surface treatment; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984054

Filename

984054