Title :
Development of 3-D focused-ion-beam (FIB) etching methods for nano- and micro-technology application
Author :
Kim, S.-J. ; Yamashita, T. ; Lee, K.-Y. ; Nagao, M. ; Sato, M. ; Maeda, H.
Author_Institution :
NICHE, Tohoku Univ., Sendai, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
We have developed a 3-D FIB etching method for making 3-D micro-devices and sensors based on nano- and micro-technology. We fabricated single electron tunneling (SET) devices on a Bi-2201 single crystal whisker. We also describe 3-D FIB etching methods using layered single crystal whiskers as examples. These methods offer simple in situ etching and evaporation processes in FIB systems for making a micro area of stacks.
Keywords :
focused ion beam technology; micromechanical devices; microsensors; nanotechnology; single electron transistors; sputter etching; superconducting junction devices; whiskers (crystal); 3-D FIB etching methods; Bi-2201 single crystal whisker; Bi/sub 2/Sr/sub 2/CuO/sub 6/; MEMS; SET; W(CO)/sub 6/ films; focused-ion-beam etching; gate electrode; in situ etching; layered single crystal whiskers; microsensors; microtechnology; nanotechnology; scanning ion microscopy; single electron tunneling device; ultra-small tunnel junction; whisker thickness; Electrodes; Electrons; Etching; Fabrication; Focusing; Ion beams; Mechanical sensors; Micromotors; Sensor systems; Tunneling;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984055
