• DocumentCode
    2248152
  • Title

    Influence of SOI wafer stress properties on placement accuracy of stencil masks

  • Author

    Kamm, F.-M. ; Ehrmann, A. ; Schafer, H. ; Butschke, J. ; Spinger, R. ; Haugeneder, E.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2001
  • fDate
    Oct. 31 2001-Nov. 2 2001
  • Firstpage
    44
  • Abstract
    Summary form only given. Due to the high contrast and nearly lossless transmission, stencil masks offer important advantages over conventional optical masks. However, especially the issue of placement control has proven to be one of the key challenges of stencil mask technology. A high placement accuracy can only be achieved with a precise control of mechanical stress of each mask layer on a global and local scale. For this reason, the stress properties of the mask blank material - typically SOI wafers - have to be known and adjusted properly. In this paper a systematic investigation of initial stress properties and the resulting placement accuracy has been performed.
  • Keywords
    internal stresses; masks; silicon-on-insulator; SOI wafer; mechanical stress; placement accuracy; stencil mask; Annealing; Biomembranes; Distortion measurement; Epitaxial growth; Manufacturing processes; Optical distortion; Optical losses; Propagation losses; Stress control; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2001 International
  • Conference_Location
    Shimane, Japan
  • Print_ISBN
    4-89114-017-8
  • Type

    conf

  • DOI
    10.1109/IMNC.2001.984060
  • Filename
    984060