DocumentCode
2248152
Title
Influence of SOI wafer stress properties on placement accuracy of stencil masks
Author
Kamm, F.-M. ; Ehrmann, A. ; Schafer, H. ; Butschke, J. ; Spinger, R. ; Haugeneder, E.
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
44
Abstract
Summary form only given. Due to the high contrast and nearly lossless transmission, stencil masks offer important advantages over conventional optical masks. However, especially the issue of placement control has proven to be one of the key challenges of stencil mask technology. A high placement accuracy can only be achieved with a precise control of mechanical stress of each mask layer on a global and local scale. For this reason, the stress properties of the mask blank material - typically SOI wafers - have to be known and adjusted properly. In this paper a systematic investigation of initial stress properties and the resulting placement accuracy has been performed.
Keywords
internal stresses; masks; silicon-on-insulator; SOI wafer; mechanical stress; placement accuracy; stencil mask; Annealing; Biomembranes; Distortion measurement; Epitaxial growth; Manufacturing processes; Optical distortion; Optical losses; Propagation losses; Stress control; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984060
Filename
984060
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