• DocumentCode
    2248311
  • Title

    FT and RBS-parameter characterization using the common-collector mode

  • Author

    Bechdolt, Bob ; Moore, Kevin

  • Author_Institution
    Digital Equipment Corp., Cupertino, CA, USA
  • fYear
    1989
  • fDate
    18-19 Sep 1989
  • Firstpage
    267
  • Lastpage
    270
  • Abstract
    S-parameter measurements using the common-collector mode are described. The common-collector mode is shown on the basis of experimental data to have several advantages over the more widely used common-emitter mode, including simpler biasing, less sensitivity to parasitics, simpler calibration requirements, and applicability to a greater variety of devices. Equations for determining fT and RB are given and compared to common-emitter derivations. A previously unreported method for extracting RB from common-collector measurements is shown and its accuracy discussed
  • Keywords
    S-parameters; bipolar transistors; S-parameter measurements; biasing; calibration requirements; common-collector mode; parasitics; sensitivity; Application specific integrated circuits; Calibration; Data mining; Electrical resistance measurement; Equations; Frequency measurement; Measurement techniques; Particle measurements; Scattering parameters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1989.69517
  • Filename
    69517