DocumentCode :
2248311
Title :
FT and RBS-parameter characterization using the common-collector mode
Author :
Bechdolt, Bob ; Moore, Kevin
Author_Institution :
Digital Equipment Corp., Cupertino, CA, USA
fYear :
1989
fDate :
18-19 Sep 1989
Firstpage :
267
Lastpage :
270
Abstract :
S-parameter measurements using the common-collector mode are described. The common-collector mode is shown on the basis of experimental data to have several advantages over the more widely used common-emitter mode, including simpler biasing, less sensitivity to parasitics, simpler calibration requirements, and applicability to a greater variety of devices. Equations for determining fT and RB are given and compared to common-emitter derivations. A previously unreported method for extracting RB from common-collector measurements is shown and its accuracy discussed
Keywords :
S-parameters; bipolar transistors; S-parameter measurements; biasing; calibration requirements; common-collector mode; parasitics; sensitivity; Application specific integrated circuits; Calibration; Data mining; Electrical resistance measurement; Equations; Frequency measurement; Measurement techniques; Particle measurements; Scattering parameters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/BIPOL.1989.69517
Filename :
69517
Link To Document :
بازگشت