Title :
A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode
Author :
Kim, Hyunsung ; Shim, Jongin
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan
Abstract :
We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime.
Keywords :
III-V semiconductors; carrier density; carrier lifetime; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; carrier lifetime; internal carrier density; internal quantum efficiency; light emitting diode; nonradiative recombination rate; power-current curve; radiative recombination rate; Charge carrier density; Charge carrier lifetime; Electric variables measurement; Light emitting diodes; Power measurement; Pulse measurements; Quantum computing; Radiative recombination; Spontaneous emission; Time measurement;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391579
