DocumentCode
2248315
Title
A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode
Author
Kim, Hyunsung ; Shim, Jongin
Author_Institution
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime.
Keywords
III-V semiconductors; carrier density; carrier lifetime; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; carrier lifetime; internal carrier density; internal quantum efficiency; light emitting diode; nonradiative recombination rate; power-current curve; radiative recombination rate; Charge carrier density; Charge carrier lifetime; Electric variables measurement; Light emitting diodes; Power measurement; Pulse measurements; Quantum computing; Radiative recombination; Spontaneous emission; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391579
Filename
4391579
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