Title :
3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Author :
Bar, E. ; Lorenz, J. ; Ryssel, H.
Author_Institution :
Lehrstuhl fur Elektronische Bauelemente, Erlangen-Nurnberg Univ., Germany
Abstract :
We present 3D simulations of sputter deposition of titanium (Ti) which, after rapid thermal nitridation (RTN), serves as barrier layer for subsequent contact hole filling by blanket tungsten CVD. The electrical properties of the contacts highly depend on the Ti bottom coverage. In consequence, prediction of the bottom coverage by means of simulation is of high interest for optimizing the electrical properties.
Keywords :
metallisation; semiconductor process modelling; sputter deposition; titanium; 3D simulation; Ti; aspect ratio; barrier layer; blanket tungsten CVD; bottom coverage; contact hole; electrical properties; rapid thermal nitridation; sputter deposition; titanium layer; Contacts; Filling; Geometry; Inorganic materials; Metallization; Predictive models; Shape; Solid modeling; Sputtering; Titanium;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621088
