DocumentCode
2248441
Title
3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Author
Bar, E. ; Lorenz, J. ; Ryssel, H.
Author_Institution
Lehrstuhl fur Elektronische Bauelemente, Erlangen-Nurnberg Univ., Germany
fYear
1997
fDate
16-19 March 1997
Firstpage
131
Lastpage
133
Abstract
We present 3D simulations of sputter deposition of titanium (Ti) which, after rapid thermal nitridation (RTN), serves as barrier layer for subsequent contact hole filling by blanket tungsten CVD. The electrical properties of the contacts highly depend on the Ti bottom coverage. In consequence, prediction of the bottom coverage by means of simulation is of high interest for optimizing the electrical properties.
Keywords
metallisation; semiconductor process modelling; sputter deposition; titanium; 3D simulation; Ti; aspect ratio; barrier layer; blanket tungsten CVD; bottom coverage; contact hole; electrical properties; rapid thermal nitridation; sputter deposition; titanium layer; Contacts; Filling; Geometry; Inorganic materials; Metallization; Predictive models; Shape; Solid modeling; Sputtering; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621088
Filename
621088
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