Title :
Transient temperature evaluation during switching process in static induction transistor
Author :
Napieralski, A. ; Grecki, M.
Author_Institution :
Inst. of Electron., Tech. Univ. Lodz, Poland
Abstract :
In this paper a 2-D electrothermal analysis of a static induction transistor (SIT) is presented. Due to its excellent switching performances, the SIT has been used in a wide range of electronics applications in recent years. The main difficulties in applications of SIT are thermal problems caused by high voltage drop and power losses in the ON-state. In order to estimate the temperature rise inside the semiconductor structure and to examine the influence of gate driving on power losses, a 2-D electrical and thermal simulation of SIT working in a simple circuit has been performed
Keywords :
losses; semiconductor device models; semiconductor switches; static induction transistors; thermal analysis; 2-D electrothermal analysis; ON-state; applications; gate driving; power losses; simulation; static induction transistor; switching performance; transient temperature evaluation; voltage drop;
Conference_Titel :
Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on
Conference_Location :
London
DOI :
10.1049/cp:19941022
