DocumentCode
2248815
Title
Transient temperature evaluation during switching process in static induction transistor
Author
Napieralski, A. ; Grecki, M.
Author_Institution
Inst. of Electron., Tech. Univ. Lodz, Poland
fYear
1994
fDate
26-28 Oct 1994
Firstpage
537
Lastpage
542
Abstract
In this paper a 2-D electrothermal analysis of a static induction transistor (SIT) is presented. Due to its excellent switching performances, the SIT has been used in a wide range of electronics applications in recent years. The main difficulties in applications of SIT are thermal problems caused by high voltage drop and power losses in the ON-state. In order to estimate the temperature rise inside the semiconductor structure and to examine the influence of gate driving on power losses, a 2-D electrical and thermal simulation of SIT working in a simple circuit has been performed
Keywords
losses; semiconductor device models; semiconductor switches; static induction transistors; thermal analysis; 2-D electrothermal analysis; ON-state; applications; gate driving; power losses; simulation; static induction transistor; switching performance; transient temperature evaluation; voltage drop;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on
Conference_Location
London
Type
conf
DOI
10.1049/cp:19941022
Filename
341652
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