DocumentCode
2248838
Title
Analysis of the insulated base MOS-controlled thyristor structure (IBMCT)
Author
Flores, D. ; Vellvehí, M. ; Godignon, P. ; Fernández, J. ; Hidalgo, S. ; Rebollo, J. ; Millán, J.
Author_Institution
Centro Nacional de Microelectron., Spain
fYear
1994
fDate
26-28 Oct 1994
Firstpage
532
Lastpage
536
Abstract
This paper analyzes the operation mode and the electrical characteristics of the insulated base MOS-controlled thyristor (IBMCT) by means of two-dimensional numerical simulations. The device has two gates, the ON-gate for arming the device on and the OFF-gate for turning it off, and a floating ohmic contact. Simulated device characteristics are reported and transient simulation results corroborate the ability of both turn-on and turn-off processes
Keywords
MOS-controlled thyristors; numerical analysis; ohmic contacts; semiconductor device models; OFF-gate; ON-gate; electrical characteristics; floating ohmic contact; insulated base MOS-controlled thyristor; operation mode; transient simulation; turn-off; turn-on; two-dimensional numerical simulation;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on
Conference_Location
London
Type
conf
DOI
10.1049/cp:19941021
Filename
341653
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