Fine pattern replication using ETS-1 three-aspherical mirror imaging system

Summary form only given. In 2006, 256 Gbit DRAM with a gate length of 70 nm will be demanded in the IT industry. Extreme ultraviolet lithography (EUVL) is a promising technology for fabricating fine patterns of less than 70 nm. For practical use, it is very important both to achieve large exposure area and to fabricate fine patterns. To meet these requirements, the ETS-1 laboratory tool, which has a large exposure field of more than 30 mm/spl times/28 mm, has been developed and set on the NewSUBARU beamline in collaboration with ASET. Patterns of 100 nm or less can be formed by a Cr absorber mask using ZEP520 and SAL601 photoresists. A line and space pattern width of 60 nm was fabricated with ZEP520. In addition, an isolated line of 43 nm width was replicated. Furthermore, a hole pattern of 150 nm was replicated. Using a scanning system, fine patterns of less than 100 nm have been replicated on a large exposure field of over 10 mm/spl times/10 mm. Using this system, sample wafers with fine patterns can be delivered to member companies of ASET, and mask defects can also be evaluated.