Title :
Analysis of multilayer structure for reflection of extreme ultra-violet wavelength
Author :
Seung Yoon Lee ; Sung Min Hur ; Hyung Joon Kim ; Dong Hyun Lee ; Young Tae Lee ; In Yong Kang ; Yong-Chae Chung ; Moonsuk Yi ; Cheol Kyu Bok ; Jinho Ahn
Author_Institution :
Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Extreme ultraviolet lithography (EUVL) is considered to be one of the most competitive next generation lithography (NGL) technologies (Gwyn et al, 1998). In EUVL, reflective multilayers are used for mask and mirror applications in the exposure system. The reflectivity of these multilayers, which is a critical factor for throughput of EUVL, is dependent on structural factors as well as the materials. Even though the at-wavelength reflectivity should be measured, we usually use other characterization techniques (e.g. cross sectional TEM or low angle XRD) when we optimize the deposition conditions. In this paper, we deposited several Mo/Si multilayers and compared the structural factors extracted from various characterization techniques.
Keywords :
X-ray diffraction; elemental semiconductors; light reflection; masks; mirrors; molybdenum; optical multilayers; reflectivity; silicon; transmission electron microscopy; ultraviolet lithography; EUVL; EUVL throughput; Mo-Si; Mo/Si multilayers; at-wavelength reflectivity; characterization techniques; cross sectional TEM; deposition condition; exposure system; extreme ultra-violet wavelength reflection; extreme ultraviolet lithography; low angle XRD; masks; mirrors; multilayer reflectivity; multilayer structure; reflective multilayers; structure factors; Degradation; Lithography; Nonhomogeneous media; Reflection; Reflectivity; Rough surfaces; Sputtering; Surface roughness; Ultraviolet sources; X-ray scattering;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984090