Gap filling with high current pulsed arc evaporation: influence of deposition parameters

Summary form only given. The presentation focuses on new and more detailed results of the high current pulsed arc evaporation technique (HCA) used for trench and via filling in aluminum and copper based multilevel metallization systems. Besides PVD-based filling techniques like Al force fill, copper reflow, copper self-sputtering or ICP/ECR-based ionised sputtering, the HCA deposition technique is performed and modified to reach void free filled vias and trenches with an increasing aspect ratio. The results show that this PVD technique can be compared with the above-mentioned filling methods. Furthermore, the potential of this method seems to be broader due to the very high ionization level and a kinetic energy of the ions up to 100 eV. It is possible to realize both a nearly conformal deposition and a via filling without sufficiently covering the top of the substrate surface.