DocumentCode
2249202
Title
AlGaN-based ultraviolet lasers — Applications and materials challenges
Author
Kneissl, Michael ; Kolbe, Tim ; Schlegel, Jessica ; Stellmach, Joachim ; Chua, Chris ; Yang, Zhihong ; Knauer, Arne ; Küller, V. ; Weyers, Markus ; Johnson, Noble M.
Author_Institution
Inst. of Solid State Phys., Tech. Univ. Berlin, Berlin, Germany
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
Recent progress in the development of ultraviolet laser diodes will be reviewed. The effect of the heterostructure design on the gain characteristics as well as epitaxial growth challenges for AlGaN-based UV lasers will be discussed.
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium compounds; quantum well lasers; reviews; semiconductor growth; AlGaN-GaN; epitaxial growth; gain characteristics; heterostructure design; review; ultraviolet laser diodes; Aluminum gallium nitride; Diode lasers; Laser excitation; Pump lasers; Quantum well lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950984
Link To Document