Title :
A compact InGaP/GaAs DHBT model based on symbolically defined device in ADS for microwave applications
Author :
Dharmasiri, C.N. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electr. Eng. & Electron., UMIST, Manchester, UK
Abstract :
In this paper a compact double heterojunction bipolar transistor (DHBT) large signal model together with the related parameter extraction and development methodology is presented. The model is developed using the non-linear symbolically defined device (SDD) in HP ADS. The model, which is valid for small and large signal simulations, is discussed and validated for wide range of biases, signal frequencies and device temperatures.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave circuits; InGaP-GaAs; double heterojunction bipolar transistor; large signal model; microwave applications; nonlinear symbolically defined device; parameter extraction; Capacitance; Circuits; Current measurement; DH-HEMTs; Gallium arsenide; Microwave devices; Photonic band gap; Signal design; Temperature dependence; Thermal resistance;
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2003
Print_ISBN :
0-7803-8123-8
DOI :
10.1109/HFPSC.2003.1242301
