Title :
Semipolar AlN on bulk GaN for UV-C diode lasers
Author :
Chung, Roy B. ; Young, Erin C. ; Haeger, Daniel A. ; DenBaars, Steven P. ; Speck, James S. ; Cohen, Daniel A.
Author_Institution :
Dept. of Mater., Univ. of California, Santa Barbara, CA, USA
Abstract :
The use of nonpolar or semipolar AlGaN for UV-C diode lasers avoids the compromises in gain, injection efficiency, and ohmic losses imposed on c-plane lasers by the unusual valence band structure of AlGaN alloys.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor lasers; wide band gap semiconductors; AlGaN; UV-C diode lasers; c-plane lasers; injection efficiency; ohmic losses; valence band structure; Aluminum gallium nitride; Buffer layers; Diode lasers; Gallium nitride; Quantum well devices; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
