DocumentCode
2249255
Title
UV pump-THz probe study of mechanisms limiting luminescence from nanoscale compositionally inhomogeneous AlGaN
Author
Metcalfe, G.D. ; Garrett, G.A. ; Rotella, Pete ; Sampath, A.V. ; Wright, John ; Hongen Shen ; Wraback, M. ; Sweeney, Timothy M. ; Hailin Wang
Author_Institution
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We present ultraviolet pump-terahertz probe and photoconductive decay measurements on nanoscale compositionally inhomogeneous AlGaN. Results compared to photoluminescence and time-resolved photoluminescence measurements indicate luminescence from the material is limited by hole trapping.
Keywords
III-V semiconductors; aluminium compounds; high-speed optical techniques; hole traps; photoconducting materials; photoluminescence; AlGaN; UV pump-THz probe study; hole trapping; nanoscale compositionally inhomogeneous AlGaN; photoconductive decay measurements; time-resolved photoluminescence measurements; ultraviolet pump-terahertz probe; Aluminum gallium nitride; Charge carrier processes; Luminescence; Materials; Probes; Semiconductor device measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950986
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