Title :
UV pump-THz probe study of mechanisms limiting luminescence from nanoscale compositionally inhomogeneous AlGaN
Author :
Metcalfe, G.D. ; Garrett, G.A. ; Rotella, Pete ; Sampath, A.V. ; Wright, John ; Hongen Shen ; Wraback, M. ; Sweeney, Timothy M. ; Hailin Wang
Author_Institution :
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
We present ultraviolet pump-terahertz probe and photoconductive decay measurements on nanoscale compositionally inhomogeneous AlGaN. Results compared to photoluminescence and time-resolved photoluminescence measurements indicate luminescence from the material is limited by hole trapping.
Keywords :
III-V semiconductors; aluminium compounds; high-speed optical techniques; hole traps; photoconducting materials; photoluminescence; AlGaN; UV pump-THz probe study; hole trapping; nanoscale compositionally inhomogeneous AlGaN; photoconductive decay measurements; time-resolved photoluminescence measurements; ultraviolet pump-terahertz probe; Aluminum gallium nitride; Charge carrier processes; Luminescence; Materials; Probes; Semiconductor device measurement; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
