• DocumentCode
    2249255
  • Title

    UV pump-THz probe study of mechanisms limiting luminescence from nanoscale compositionally inhomogeneous AlGaN

  • Author

    Metcalfe, G.D. ; Garrett, G.A. ; Rotella, Pete ; Sampath, A.V. ; Wright, John ; Hongen Shen ; Wraback, M. ; Sweeney, Timothy M. ; Hailin Wang

  • Author_Institution
    Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present ultraviolet pump-terahertz probe and photoconductive decay measurements on nanoscale compositionally inhomogeneous AlGaN. Results compared to photoluminescence and time-resolved photoluminescence measurements indicate luminescence from the material is limited by hole trapping.
  • Keywords
    III-V semiconductors; aluminium compounds; high-speed optical techniques; hole traps; photoconducting materials; photoluminescence; AlGaN; UV pump-THz probe study; hole trapping; nanoscale compositionally inhomogeneous AlGaN; photoconductive decay measurements; time-resolved photoluminescence measurements; ultraviolet pump-terahertz probe; Aluminum gallium nitride; Charge carrier processes; Luminescence; Materials; Probes; Semiconductor device measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950986