Title :
Near-UV LEDs on sapphire using single crystal AlN-buffer
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
UV-LEDs were fabricated on GaN formed on sapphire using high-temperature-grown AlN buffer. For flip-chip devices, peak wavelength, output power, operation voltage and external quantum efficiency at 20 mA were 383 nm, 23 mW, 3.5 V and 36%, respectively. The internal quantum efficiency was estimated to be as high as 72%. These values were comparable to those for visible LEDs.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; AlN; GaN; flip-chip devices; high-temperature-grown AlN buffer; internal quantum efficiency; near-UV LED; sapphire; single crystal AlN-buffer; Absorption; Crystals; Gallium nitride; Light emitting diodes; Optical surface waves; Power generation; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
