DocumentCode :
2249291
Title :
Efficient phase and intensity modulation in substrate removed GaAs/AlGaAs nanowires
Author :
Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
Substrate- removed GaAs/AlGaAs nanowire phase modulators with 0.51 V pi phase shift efficiency were fabricated. Quasi push-pull driven Mach-Zehnder intensity modulators made out of these phase modulators have record low 0.3 V drive voltage for 7 mm long electrode.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; integrated optics; intensity modulation; nanowires; phase modulation; semiconductor quantum wires; GaAs-AlGaAs; Mach-Zehnder modulators; electrode; intensity modulation; nanowire phase modulators; phase modulation; phase modulators; quasipush-pull driven modulators; size 7 mm; substrate removed nanowires; voltage 0.3 V; Gallium arsenide; Intensity modulation; Low voltage; Nanowires; Optical interferometry; Optical modulation; Optical ring resonators; Optical waveguides; Phase modulation; Substrates; (250.0250) Optoelectronics; (250.5300) Photonic integrated circuits;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572010
Link To Document :
بازگشت