Title :
UV light emitter on bulk semipolar (11–22) GaN
Author :
Detchprohm, T. ; Zhao, L. ; Zhu, M. ; Stark, C. ; Dibiccari, M. ; You, S. ; Hou, W. ; Preble, E.A. ; Paskova, T. ; Evans, K. ; Wetzel, C.
Author_Institution :
Future Chips Constellation, Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A 392 nm GalnN-based UV light emitter has been demonstrated by homoepitaxial growth technique aiming to improve quantum efficiency by crystalline perfection of the heterostructures on naturally stable semipolar (11-22) bulk GaN.
Keywords :
epitaxial growth; gallium compounds; indium compounds; light emitting devices; ultraviolet spectra; wide band gap semiconductors; GaInN; bulk semipolar GaN; crystalline perfection; homoepitaxial growth technique; quantum efficiency; ultraviolet light emitter; wavelength 392 nm; Aluminum gallium nitride; Current density; Gallium nitride; Light emitting diodes; Performance evaluation; Power generation; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
