Low Voltage High-Performance Class-AB FGMOS Buffer

Author

Moolpho, Kornika ; Ngarmnil, Jitkasame

Author_Institution

Dept. of Mechatronic Eng., Mahanakorn Univ. of Technol., Bangkok

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1779

Lastpage

1782

Abstract

A new high speed low voltage class-AB CMOS buffer is proposed in this paper. Embedded with the proposed low voltage error amplifier comprising only CMOS inverters and floating-gate MOSFETs, the well known complementary class-AB CMOS buffer is successfully designed and operated with 1.5V power supply and the unity gain bandwidth of 29MHz. The output stage delivers maximum output sinusoidal voltage swing of plusmn0.6V into a resistive load of 100 Ohms. The buffer exhibits -55dB THD for 100 kHz and plusmn0.5V output voltage swing with less than 1% output voltage error on a 0.5mum CMOS process. Simulation results on rectangular wave responses show the system stability and confirm the maximum output capacitive load of 60pF with 1V signal swing and 9.4 V/muS slew rate

Keywords

CMOS integrated circuits; MOSFET circuits; amplifiers; buffer circuits; 0.5 micron; 1.5 V; CMOS inverters; class-AB CMOS buffer; class-AB FGMOS buffer; floating-gate MOSFET; low voltage error amplifier; rectangular wave response; Bandwidth; CMOS process; CMOS technology; Circuits; Inverters; Low voltage; MOSFETs; Mechatronics; Power supplies; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342163

Filename

4145757