Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

Author

Takakuwa, Y. ; Ishida, F. ; Kawawa, T.

Author_Institution

Inst. of Multidisciplinary Res. for Adv. Mater., Tohoku Univ., Sendai, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

110

Lastpage

111

Abstract

Si thermal oxidation has been and will be one of the key processes in fabrication of MOSFET devices designed with a scale of sub-micrometers. For the sake, SiO, layers as thin as sub-nanometers are demanded. Such an initial stage of Si thermal oxidation is strongly affected in growth and surface morphology by the 0, pressure and temperature.´) In this study, Auger electron spectroscopy combined with reflection high energy electron diflaction (RHEED-AES) was employed to observe simultaneously the time evolution of surface morphology and SiO, coverage as a function of 0, pressure during thermal oxidation on a Si(OO1)2x1 surface in order to clarify the surface reaction mechanism of Si initial oxidation.

Keywords

Auger electron spectroscopy; MOSFET; elemental semiconductors; oxidation; reflection high energy electron diffraction; silicon; silicon compounds; AES; Auger electron spectroscopy; MOSFET devices; RHEED; Si-SiO/sub 2/; initial oxidation; reflection high energy electron diffraction; surface morphology; surface reaction mechanism; thermal oxidation; time evolution; Diffraction; Electrons; Fabrication; MOSFET circuits; Oxidation; Oxygen; Reflection; Spectroscopy; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984113

Filename

984113