Title :
Computer model for a high power SCR
Author :
Nienhaus, H.A. ; Bowers, J.C. ; Herren, P.C.
Author_Institution :
Univ. of South Florida, Tampa, FL, USA
Abstract :
This paper describes a general computer model for a high power SCR that gives an accurate simulation of all important static and dynamic performance characteristics including such two-dimensional effects a spreading, gate isolation, and latch-in. Computer simulated vs. measured static characteristics of a representative device are listed for comparison. A comparison of a computer simulated vs. measured turn on transient is also included.
Keywords :
semiconductor device models; thyristors; computer model; high power SCR; two-dimensional effects; Anodes; Cathodes; Computational modeling; Computers; Junctions; Logic gates; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1976 IEEE
Conference_Location :
Cleveland, OH
DOI :
10.1109/PESC.1976.7072898
