• DocumentCode
    2249503
  • Title

    Computer model for a high power SCR

  • Author

    Nienhaus, H.A. ; Bowers, J.C. ; Herren, P.C.

  • Author_Institution
    Univ. of South Florida, Tampa, FL, USA
  • fYear
    1976
  • fDate
    8-10 June 1976
  • Firstpage
    56
  • Lastpage
    61
  • Abstract
    This paper describes a general computer model for a high power SCR that gives an accurate simulation of all important static and dynamic performance characteristics including such two-dimensional effects a spreading, gate isolation, and latch-in. Computer simulated vs. measured static characteristics of a representative device are listed for comparison. A comparison of a computer simulated vs. measured turn on transient is also included.
  • Keywords
    semiconductor device models; thyristors; computer model; high power SCR; two-dimensional effects; Anodes; Cathodes; Computational modeling; Computers; Junctions; Logic gates; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1976 IEEE
  • Conference_Location
    Cleveland, OH
  • Type

    conf

  • DOI
    10.1109/PESC.1976.7072898
  • Filename
    7072898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2249503