Title :
Synthesis of microcrystalline silicon thin films using a low-pressure microwave plasma
Author :
Kikukawa, D. ; Honma, K. ; Hori, M. ; Goto, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Microwave plasma (MWP) has been used for the formation of microcrystalline silicon (/spl mu/c-Si:H) thin films since MWP has low electron temperatures, -2.4 eV, and high electron densities, /spl sim/10/sup 10/ cm/sup -3/ (Shirai et al, Jpn. J. Appl. Phys. vol. 37, p. L1078, 1998). Generally in the MWP system, the plasma is not generated stably at a low pressure. In this study, we have developed a new MWP source operating at low pressure. The low pressure MWP will enable us to form the /spl mu/c-Si:H film over a large area. We have investigated the growth of /spl mu/c-Si:H thin films and the effect of dilution gases such as Ar and Xe on film properties at low pressure in SiH/sub 4/-H/sub 2/ MWP. The crystallinity of films was investigated by Raman spectroscopy and X-ray diffraction (XRD). The absolute density of H atoms was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS). The time-evolution spectra of chemical bonds in the initial film were obtained by in-situ Fourier transform infrared spectroscopy attenuated total reflection (FT-IR ATR).
Keywords :
Fourier transform spectra; Raman spectra; X-ray diffraction; elemental semiconductors; hydrogen; plasma deposition; plasma radiofrequency heating; semiconductor growth; semiconductor thin films; silicon; spectrochemical analysis; ultraviolet spectra; /spl mu/c-Si:H thin film growth; /spl mu/c-Si:H thin films; 2.4 eV; Ar; Ar/Xe dilution gases; FT-IR ATR; MWP electron densities; MWP electron temperatures; Raman spectroscopy; Si:H; SiH/sub 4/-H/sub 2/; SiH/sub 4/-H/sub 2/ MWP; VUVAS; X-ray diffraction; XRD; Xe; absolute H atom density; chemical bonds; crystallinity; film properties; in-situ Fourier transform infrared spectroscopy attenuated total reflection; low pressure MWP source; low-pressure microwave plasma; microcrystalline silicon thin film synthesis; microcrystalline silicon thin films; stable plasma generation; time-evolution spectra; vacuum ultraviolet absorption spectroscopy; Electrons; Gases; Optical films; Plasma density; Plasma sources; Plasma temperature; Semiconductor thin films; Silicon; Spectroscopy; Transistors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984116
