DocumentCode :
2249619
Title :
2-D analysis of more then one semiconductor devices together with real external circuit
Author :
Grecki, M. ; Turowski, M. ; Napieralski, A.
Author_Institution :
Inst. of Electron., Tech. Univ. Lodz, Poland
fYear :
1994
fDate :
26-28 Oct 1994
Firstpage :
441
Lastpage :
446
Abstract :
In this paper, a new software tool for 2-D simulation of power semiconductor devices is presented. It gives new possibilities in the analysis of complex devices and enables the examination of inhomogeneity of parameters in multiple-cell structures. Exact 2-D models of more then one semiconductor device are used together with an arbitrary external circuit. The devices do not need to be the same kind and type. Only computer performance limits the number of elements described by the physical models. The PAMSSEC program is written in C language and can be used on a wide range of computers, from IBM PCs (or compatibles) through SUN Sparc workstations to CRAY supercomputers. It allows the use of several computers connected in a network to speed up the computations. Its high performance allows the accomplishment of simulations of complex circuits in a relatively short time, even on microcomputers
Keywords :
circuit analysis computing; digital simulation; microcomputer applications; power engineering computing; power semiconductor devices; semiconductor device models; software packages; 2-D simulation; C language; CRAY supercomputers; IBM PCs; PAMSSEC program; SUN Sparc workstations; complex devices; computer simulation; external circuit; microcomputers; multiple-cell structures; parameter inhomogeneity; performance; power semiconductor devices; software tool;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on
Conference_Location :
London
Type :
conf
DOI :
10.1049/cp:19941006
Filename :
341687
Link To Document :
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