Title :
Ballistic deflection transistors and the emerging nanoscale era
Author :
Wolpert, David ; Irie, Hiroshi ; Sobolewski, Roman ; Ampadu, Paul ; Diduck, Quentin ; Margala, Martin
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
Abstract :
This paper presents a brief survey of the state of the art in nanoscale electronics, with special emphasis on room-temperature nanoscale ballistic deflection transistors (BDTs) and T-branch junctions (TBJs). Both devices are planar structures etched into a two-dimensional electron gas (2DEG). Extremely low capacitances (~0.2 fF) in the 2DEG system and low switching voltages (~0.15 V) predict THz performance and ultra-low power consumption, making BDTs and TBJs among the most promising and versatile of ballistic nanoelectronic devices. Obstacles in circuit and logic design using the BDT are presented along with potential solutions. I-V characteristics from a fabricated BDT and simulation results from a two-input BDT NAND gate are provided. Future plans to facilitate large-scale integration are discussed.
Keywords :
ballistic transport; high electron mobility transistors; logic gates; nanoelectronics; NAND gate; T-branch junctions; ballistic deflection transistors; nanoscale electronics; nanoscale era; room-temperature nanoscale ballistic deflection transistors; two-dimensional electron gas; Capacitance; Circuit simulation; Electrons; Energy consumption; Etching; Large scale integration; Logic design; Low voltage; Nanoscale devices; Transistors;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5117685
