Fabrication and characterization of emerging nanoscale memory

Conventional solid state memory technologies such as flash memory, DRAM, and SRAM are facing scaling challenges due to fundamental limitations. Therefore, various new memory technologies are being widely researched and evaluated to continue the cost/performance improvement trend of solid state memory devices. To assess the potential scalability of emerging nanoscale memory beyond conventional limits, it is essential to characterize and understand how differently they perform at the nanoscale compared to known properties in the microscale. New nanoscale fabrication methods and new memory technologies offer a great opportunity for future memory device research. In this regard, we evaluated characteristics of nanoscale phase change memory and Ni oxide memory using nanofabrication technologies such as nanowire growth, nanocrystal synthesis, diblock copolymer patterning, and e-beam lithography. Evaluated characteristics include not only their device performance but also key material properties that might affect the ultimate device performance. The nanofabrication method for each memory material is also discussed due to its potential to overcome the difficulties of conventional semiconductor fabrication process.