Title :
Reduction of molybdenum resistivity by a seed layer of Ti-W
Author :
Franssila, S. ; Kattelus, H. ; Nykänen, E.
Author_Institution :
VTT Electron., Espoo, Finland
Abstract :
Molybdenum films have been deposited by sputtering for integrated circuit metallization. The sputtering system used in this study is a sideways depositing batch unit with a rotating wafer drum, operating at a base vacuum range below 5.10/sup -7/ mbar. We have experimentally observed that a Ti-W seed layer deposited underneath molybdenum reduces its resistivity significantly when compared to direct deposition of Mo onto silicon oxide.
Keywords :
electrical resistivity; integrated circuit metallisation; metallic thin films; molybdenum; sputtered coatings; titanium alloys; tungsten alloys; Mo; Ti-W; Ti-W seed layer; integrated circuit metallization; molybdenum film; resistivity; sputtering; Chemical engineering; Chemical technology; Conductive films; Conductivity; Inorganic materials; Metallization; Plasma temperature; Silicon; Sputtering; Stress control;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621093
