Characteristics of the line width variation due to lens flare and its dependency on optical parameters

Author

Tae Moon Jeong ; Sung-Woon Choi ; Woo-Sung Han ; In-Kyun Shin ; Dong-Hoon Chung ; Sung-Hyuck Kim ; Hyoung-Do Kim ; Jung-Min Sohn

Author_Institution

Photomask Team, Samsung Electron. Co. Ltd., Kyunggi, South Korea

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

134

Lastpage

135

Abstract

In this paper, we have investigated the line width variation depending on the amount of flare in DUV (248 nm) exposure tools and the optical parameters affecting line width variation due to flare. The field to be exposed was divided into two regions. One half has the open ratio of about 0% and the other about 100%. Since the open ratio means the ratio between the diffracted light by line and space patterns and the scattered light by flare, the change in open ratio corresponds to the change in the amount of flare. Also, since flare affects the line width variation to a limited range, we can decide the flare affected range (FAR) by measuring the line width from the boundary between 0 and 100% open ratio toward each direction.

Keywords

lenses; light diffraction; light scattering; spectral line breadth; ultraviolet lithography; 248 nm; DUV exposure tools; diffracted light; flare affected range; lens flare; line space patterns; line width variation; open ratio; optical microlithography; optical parameters; scattered light; Diffraction; Geometry; Lenses; Light scattering; Lighting; Moon; Optical scattering; Position measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984125

Filename

984125