Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 /spl mu/m contact hole pattern in 193 nm lithography

In order to provide good resolution enhancing efficiency and productivity, embedded materials for phase shifting masks must meet many criteria, including phase shift of 180°, exposure durability (Smith et al, 1996), etc. However, the most important property of embedded materials is chemical stability, including cleaning, exposure and environmental durability. We develop the correlation between chemical compositions and sputtering conditions of thin films for approaches to embedded materials with better chemical stability. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new bi-layer high transmittance (T⩾15%) embedded material for attenuated phase-shifting mask (AttPSM) in 193 nm.