DocumentCode :
2249891
Title :
Recent progress of Cu(InGa)Se2 solar cells
Author :
Zhang, Xieqiu ; Xiao, Xudong
Author_Institution :
Dept. of Phys., Chinese Univ. of Hong Kong, Hong Kong, China
fYear :
2011
fDate :
13-16 Nov. 2011
Firstpage :
1
Lastpage :
10
Abstract :
As the most efficient thin film solar cells, Cu(InGa)Se2 based solar cell has attracted extensive studies recently. In this paper we have briefly reviewed recent progress of CIGS solar cells both in the laboratory and in the industry. For the research status, we focused on recent progress in cell structure and material selection/preparation for different functional layers in the highly efficient CIGS solar cells. We also summarized the main achievements from several leading research groups in producing high efficiency CIGS solar cells and presented their efficiency records on different substrates (glass, stainless steel, Ti and polymer). For CIGS industrialization, we reviewed the main progress in several representative CIGS companies. We summarized the fabrication technology and characteristics, and the main achievements in the production capacity for many CIGS companies worldwide. We also reviewed the research progress of our group (CUHK and SIAT) on small size CIGS solar cells and mini-modules. We believe that the CIGS production capacity and actual production will increase very fast and play important role in photovoltaic industry in the near future.
Keywords :
copper compounds; gallium compounds; indium compounds; materials preparation; semiconductor thin films; solar cells; ternary semiconductors; CIGS production capacity; CIGS solar cells; Cu(InGa)Se2; cell structure; fabrication technology; functional layers; material selection-preparation; photovoltaic industry; thin film solar cells; Abstracts; Glass; Lead; Steel; Substrates; USA Councils; CIGS; Cu(InGa)Se2; Photovoltaic; Thin-film solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
ISSN :
2162-108X
Print_ISBN :
978-0-8194-8961-6
Type :
conf
DOI :
10.1117/12.904117
Filename :
6210933
Link To Document :
بازگشت