• DocumentCode
    2249891
  • Title

    Recent progress of Cu(InGa)Se2 solar cells

  • Author

    Zhang, Xieqiu ; Xiao, Xudong

  • Author_Institution
    Dept. of Phys., Chinese Univ. of Hong Kong, Hong Kong, China
  • fYear
    2011
  • fDate
    13-16 Nov. 2011
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    As the most efficient thin film solar cells, Cu(InGa)Se2 based solar cell has attracted extensive studies recently. In this paper we have briefly reviewed recent progress of CIGS solar cells both in the laboratory and in the industry. For the research status, we focused on recent progress in cell structure and material selection/preparation for different functional layers in the highly efficient CIGS solar cells. We also summarized the main achievements from several leading research groups in producing high efficiency CIGS solar cells and presented their efficiency records on different substrates (glass, stainless steel, Ti and polymer). For CIGS industrialization, we reviewed the main progress in several representative CIGS companies. We summarized the fabrication technology and characteristics, and the main achievements in the production capacity for many CIGS companies worldwide. We also reviewed the research progress of our group (CUHK and SIAT) on small size CIGS solar cells and mini-modules. We believe that the CIGS production capacity and actual production will increase very fast and play important role in photovoltaic industry in the near future.
  • Keywords
    copper compounds; gallium compounds; indium compounds; materials preparation; semiconductor thin films; solar cells; ternary semiconductors; CIGS production capacity; CIGS solar cells; Cu(InGa)Se2; cell structure; fabrication technology; functional layers; material selection-preparation; photovoltaic industry; thin film solar cells; Abstracts; Glass; Lead; Steel; Substrates; USA Councils; CIGS; Cu(InGa)Se2; Photovoltaic; Thin-film solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
  • Conference_Location
    Shanghai
  • ISSN
    2162-108X
  • Print_ISBN
    978-0-8194-8961-6
  • Type

    conf

  • DOI
    10.1117/12.904117
  • Filename
    6210933