Title :
Polarization electronics - a path to multifunctional nanoscale materials
Author :
Myers, Thomas H. ; Lederman, David
Author_Institution :
Dept. of Phys., West Virginia Univ., Morgantown, WV
Abstract :
An oft-overlooked parameter in semiconductor-based device structures is the presence of induced or spontaneous polarization. Polarization provides an added degree of freedom that can be used to fabricate new and innovative device structures both for electronics and photonics. We present a discussion of two approaches - the use of spontaneous polarization in GaN for nanoscale photonic devices and structures, and the potential for the integration of complex oxides with GaN for induced polarization electronics
Keywords :
gallium compounds; nanostructured materials; polarisation; semiconductor devices; GaN; complex oxides; induced polarization electronics; multifunctional nanoscale materials; nanoscale photonic devices; semiconductor-based device structures; spontaneous polarization; Etching; Ferroelectric materials; Gallium nitride; Molecular beam epitaxial growth; Nanoscale devices; Nanostructured materials; Periodic structures; Photonic crystals; Piezoelectric polarization; Semiconductor materials;
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
DOI :
10.1109/MELCON.2006.1653022
