Title :
Analysis of electron transmission properties from EPL membrane masks
Author :
Seko, C. ; Hayashi, H. ; Ono, K. ; Iriye, Y. ; Nomura, E.
Author_Institution :
Frontier Sci. & Technol., Fuji Res. Inst. Corp., Tokyo, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Summary form only given. In the present study, we investigate the electron transmission properties in 150-nm thick Si/sub 3/N/sub 4/ membrane masks exposed to high energy (E=100 keV) electrons with the modified electron scattering simulation. We report energy loss spectra and the angular distribution of transmitted electrons and compare the simulation and experimental results. We discuss the effect of temperature in the membrane masks on the shape of the zero-loss energy distribution.
Keywords :
electron beam lithography; electron energy loss spectra; masks; membranes; secondary electron emission; semiconductor process modelling; silicon compounds; 100 keV; 150 nm; Si/sub 3/N/sub 4/; Si/sub 3/N/sub 4/ EPL membrane masks; electron projection lithography; electron transmission properties; energy loss spectra; high energy electrons; mask temperature; modified electron scattering simulation; transmitted electron angular distribution; zero-loss energy distribution shape; Biomembranes; Electrons; Energy loss; Ionization; Light scattering; National electric code; Page description languages; Temperature; Throughput;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984134
