Analysis of electron transmission properties from EPL membrane masks

Author

Seko, C. ; Hayashi, H. ; Ono, K. ; Iriye, Y. ; Nomura, E.

Author_Institution

Frontier Sci. & Technol., Fuji Res. Inst. Corp., Tokyo, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

150

Abstract

Summary form only given. In the present study, we investigate the electron transmission properties in 150-nm thick Si/sub 3/N/sub 4/ membrane masks exposed to high energy (E=100 keV) electrons with the modified electron scattering simulation. We report energy loss spectra and the angular distribution of transmitted electrons and compare the simulation and experimental results. We discuss the effect of temperature in the membrane masks on the shape of the zero-loss energy distribution.

Keywords

electron beam lithography; electron energy loss spectra; masks; membranes; secondary electron emission; semiconductor process modelling; silicon compounds; 100 keV; 150 nm; Si/sub 3/N/sub 4/; Si/sub 3/N/sub 4/ EPL membrane masks; electron projection lithography; electron transmission properties; energy loss spectra; high energy electrons; mask temperature; modified electron scattering simulation; transmitted electron angular distribution; zero-loss energy distribution shape; Biomembranes; Electrons; Energy loss; Ionization; Light scattering; National electric code; Page description languages; Temperature; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984134

Filename

984134