• DocumentCode
    2250021
  • Title

    Achievement of ultra-low threshold excitation power (8 nW) in a nearly-single quantum dot nanocavity laser

  • Author

    Nomura, Masahiro ; Ota, Yasutomo ; Kumagai, Naoto ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

  • Author_Institution
    Inst. for Nano Quantum Inf. Electron., Tokyo
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate photonic crystal nanocavity laser with nearly-single quantum dot gain. Continuous-wave lasing was achieved at photocarrier generation rate of 5 times 109/s, corresponding to several carrier injection into nearly-single quantum dot.
  • Keywords
    photonic crystals; quantum dot lasers; carrier injection; continuous wave lasing; nearly single quantum dot; photocarrier generation rate; photonic crystal nanocavity laser; power 8 nW; ultra low threshold excitation power; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser modes; Laser theory; Photonic crystals; Power lasers; Pump lasers; Quantum dot lasers; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250021