Title :
Deposition of thin TiN films by low-power reactive magnetron sputtering
Author :
Chuk, P. V Mikhal ; Orlikovsky, A.A. ; Vasiliev, A.G. ; Lebedev, O.I. ; Zakharov, D.N.
Author_Institution :
Inst. of Phys. & Technol., Acad. of Sci., Moscow, Russia
Abstract :
In this work, we present the study of low-power reactive magnetron sputtering (LPRMS) of TiN films at subcritical nitrogen pressures. Emphasis was given to the structural and electrophysical properties of the layers as candidates for barrier and VLSI interconnection applications.
Keywords :
diffusion barriers; integrated circuit interconnections; sputter deposition; titanium compounds; TiN; TiN thin film; VLSI interconnection; barrier layer; electrophysical properties; low-power reactive magnetron sputtering; structural properties; Conductivity; Magnetic materials; Magnetic multilayers; Nitrogen; Physics; Sputtering; Substrates; Temperature measurement; Tin; Titanium;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621094
