Mask charging phenomena during electron beam exposure in the EPL system

Author

Ishida, Y. ; Kotera, M.

Author_Institution

Dept. of Electron. Eng., Osaka Inst. of Technol., Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

154

Lastpage

155

Abstract

We solve the charge continuity equation and obtain the saturated charge density distribution and the electric potential distribution in and around the mask material. We obtain the accumulated charge distribution by Monte Carlo simulation of electron trajectories after electron beam irradiation. Because of secondary electron emission, all surfaces of the structure are charged positively, especially those of the line region. Electrons which cannot escape from the surface are stored inside the mask material, and those parts are charged negatively. The potential distribution can be obtained by solving the Poisson equation with three-dimensional boundary conditions.

Keywords

Monte Carlo methods; Poisson equation; electron beam lithography; masks; secondary electron emission; semiconductor process modelling; surface charging; surface potential; EPL system; Monte Carlo simulation; Poisson equation; accumulated charge distribution; charge continuity equation; electric potential distribution; electron beam exposure; electron trajectories; mask charging phenomena; negatively charged parts; positively charged surfaces; saturated charge density distribution; secondary electron emission; three-dimensional boundary conditions; Computer simulation; Conducting materials; Current; Electron beams; Electron emission; Electron mobility; Image analysis; Optical scattering; Page description languages; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984136

Filename

984136