Title :
EPL proximity and Coulomb effect correction by mask bias method
Author :
Kobinata, H. ; Yamada, Y. ; Tamura, T. ; Fujii, K. ; Shinbo, O. ; Nozue, H.
Author_Institution :
VLSI Device Dev. Div., NEC Corp., Kanagawa, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
The mask bias method has proved to be a suitable method for EPL proximity effect correction. However, the linewidth reduction ratio due to the backscattering energy changes if the beam blur of the pattern changes. When the beam blur due to the Coulomb interaction effect in the sub-field is not uniform, the value of the mask bias should be modified. In this paper, we discuss the proximity effect correction method, considering the Coulomb interaction distribution in the sub-field.
Keywords :
Monte Carlo methods; electron backscattering; electron beam lithography; masks; proximity effect (lithography); semiconductor process modelling; Coulomb effect correction; Coulomb interaction distribution; EPL; Monte-Carlo simulator; backscattering energy; electron-beam projection lithography; linewidth reduction; mask bias method; pattern beam blur; proximity effect correction; Acceleration; Backscatter; Electron optics; Lithography; National electric code; Page description languages; Particle beams; Proximity effect; Research and development; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984137
