Power semiconductor devices, PESC, 1976

Discrete power semiconductors and other electrical components have demanding applications today that require new sophistication in design, characterization, and performance. Voltage and power levels, as well as switching speeds available in thyristors and transistors, make additional knowledge of dynamic characteristics essential. In this session, seven papers are presented that embody additional knowledge - two are devoted to aspects of power transistor second breakdown phenomena; one describes the design and characteristics of a field terminated diode that offers improved characteristics over an SCR; three are committed to the design of light activated thyristors and switches; and one describes nondestructive corona studies of mylar capacitors.