X-ray absorption fine structure measurement using a scanning capacitance microscope: trial for selective observation of trap centers in the /spl sim/nm region

In this paper, X-ray absorption fine structure (XAFS) measurements using a scanning capacitance microscope (SCM-XAFS method) are performed. Though the concept of this method is the same as the capacitance XAFS method, trap centers in selectable /spl sim/nm regions would be analyzed by using a scanning probe. Moreover, by controlling the bias voltage applied to the scanning probe, surface trap center selection is successfully achieved in the XAFS measurements.