DocumentCode :
2250119
Title :
Modal gain, loss, and thermal resistance of a metamorphic GaSb-based laser in room-temperature continuous-wave operation at 2 μm
Author :
Apiratikul, Paveen ; He, Lei ; Richardson, Christopher J.K.
Author_Institution :
Lab. for Phys. Sci., College Park, MD, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report a metamorphic type-I GaSb-based laser grown on a GaAs substrate that operates continuous wave at room temperature with low internal loss and low thermal resistance compared to pseudomorphic lasers.
Keywords :
III-V semiconductors; gallium alloys; gallium arsenide; semiconductor lasers; substrates; thermal resistance; GaAs; GaSb; low internal loss; low thermal resistance; metamorphic laser; modal gain; room-temperature continuous-wave operation; substrate; Gallium arsenide; Gas lasers; Measurement by laser beam; Semiconductor lasers; Substrates; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951021
Link To Document :
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