Title :
Light sensitive structure for high voltage thyristors
Author :
De Bruyne, P. ; Sittig, R.
Author_Institution :
Res. Center, BBC Brown Boveri, Baden, Switzerland
Abstract :
A new structure for a light sensitive area is investigated which should be used for direct light activation of high power thyristors. This structure enables thyristors to be constructed which require only moderate light intensity for triggering while still exhibiting a high dv/dt capability. Test samples were produced showing a forward blocking voltage of 4.5 kV. They can withstand a rate of voltage rise of more than 3000 V/μs even at a temperature of 125°C. Using a GaAs-LED they can be triggered with an incident radiant power of about 15 mW.
Keywords :
optical materials; thyristors; direct light activation; forward blocking voltage; high power thyristors; high voltage thyristors; incident radiant power; light sensitive area; light sensitive structure; structure enables thyristors; Capacitance; Junctions; Logic gates; Optical sensors; Optical surface waves; Space charge; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1976 IEEE
Conference_Location :
Cleveland, OH
DOI :
10.1109/PESC.1976.7072926
