Title :
Metal etcher characterization using flash memory cells as charge sensors
Author :
Alba, S. ; Colognese, A. ; Ghio, E.
Author_Institution :
SGS-Thomson Microelectron., Agrate Brianza, Italy
Abstract :
In this work, flash memory cells in 0.5 /spl mu/m technology have been used as charge sensors to characterize a Transformer Coupled Plasma (TCP) metal etcher. The philosophy of the method is analogous to that of CHARM wafers.
Keywords :
EPROM; charge measurement; integrated circuit metallisation; integrated memory circuits; sputter etching; 0.5 micron; Transformer Coupled Plasma metal etcher; charge sensor; flash memory cell; wafer charging; Etching; Fabrication; Flash memory cells; Inorganic materials; Metallization; Plasma applications; Plasma sources; Radio frequency; Sensor phenomena and characterization; Threshold voltage;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621095
