• DocumentCode
    2250189
  • Title

    Metal etcher characterization using flash memory cells as charge sensors

  • Author

    Alba, S. ; Colognese, A. ; Ghio, E.

  • Author_Institution
    SGS-Thomson Microelectron., Agrate Brianza, Italy
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    In this work, flash memory cells in 0.5 /spl mu/m technology have been used as charge sensors to characterize a Transformer Coupled Plasma (TCP) metal etcher. The philosophy of the method is analogous to that of CHARM wafers.
  • Keywords
    EPROM; charge measurement; integrated circuit metallisation; integrated memory circuits; sputter etching; 0.5 micron; Transformer Coupled Plasma metal etcher; charge sensor; flash memory cell; wafer charging; Etching; Fabrication; Flash memory cells; Inorganic materials; Metallization; Plasma applications; Plasma sources; Radio frequency; Sensor phenomena and characterization; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621095
  • Filename
    621095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250189