Title :
Direct patterning on low dielectric constant materials with electron beam lithography
Author :
Ben-Chang Chen ; Yee-Kai Lai ; Fu-Hsiang Ko ; Cheng-Tung Chou ; Hsuen-Li Chen
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.
Keywords :
dielectric thin films; electron beam lithography; nanotechnology; organic compounds; direct patterning; electron beam lithography; electron sensitive low-k material; hydrogen silsesquioxane film; low-dielectric-constant materials; nanofabrication; negative tone HSQ film; Chemical engineering; Dielectric constant; Dielectric materials; Electron beams; Laboratories; Lithography; Nanoscale devices; Resists; Single electron transistors; Temperature sensors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984143
